![Multi-Sizes Multi-Brightnesses 260nm-280nm Ultraviolet UV LED Pacakge, High Power 3-7MW 3535 UVA UVC LED Lamp Beads Package with Rosh Reach - China LED Lamp Beads Package with Rosh Reach, High Power 3-7MW Multi-Sizes Multi-Brightnesses 260nm-280nm Ultraviolet UV LED Pacakge, High Power 3-7MW 3535 UVA UVC LED Lamp Beads Package with Rosh Reach - China LED Lamp Beads Package with Rosh Reach, High Power 3-7MW](https://image.made-in-china.com/44f3j00wRIWftdMhDbL/Multi-Sizes-Multi-Brightnesses-260nm-280nm-Ultraviolet-UV-LED-Pacakge-High-Power-3-7MW-3535-UVA-UVC-LED-Lamp-Beads-Package-with-Rosh-Reach.jpg)
Multi-Sizes Multi-Brightnesses 260nm-280nm Ultraviolet UV LED Pacakge, High Power 3-7MW 3535 UVA UVC LED Lamp Beads Package with Rosh Reach - China LED Lamp Beads Package with Rosh Reach, High Power 3-7MW
![Ultraviolet optoelectronic devices based on AlGaN-SiC platform: Towards monolithic photonics integration system - ScienceDirect Ultraviolet optoelectronic devices based on AlGaN-SiC platform: Towards monolithic photonics integration system - ScienceDirect](https://ars.els-cdn.com/content/image/1-s2.0-S2211285520307278-gr1.jpg)
Ultraviolet optoelectronic devices based on AlGaN-SiC platform: Towards monolithic photonics integration system - ScienceDirect
![13 mW operation of a 295–310 nm AlGaN UV-B LED with a p-AlGaN transparent contact layer for real world applications - Journal of Materials Chemistry C (RSC Publishing) DOI:10.1039/C8TC03825B 13 mW operation of a 295–310 nm AlGaN UV-B LED with a p-AlGaN transparent contact layer for real world applications - Journal of Materials Chemistry C (RSC Publishing) DOI:10.1039/C8TC03825B](https://pubs.rsc.org/image/article/2019/TC/c8tc03825b/c8tc03825b-f1_hi-res.gif)
13 mW operation of a 295–310 nm AlGaN UV-B LED with a p-AlGaN transparent contact layer for real world applications - Journal of Materials Chemistry C (RSC Publishing) DOI:10.1039/C8TC03825B
![Asahi Kasei and Nara Medical University Confirm 226 nm UVC LED Efficacy Against SARS-CoV-2 and Verify Reduced Effect on Animal Skin Cells - LEDinside Asahi Kasei and Nara Medical University Confirm 226 nm UVC LED Efficacy Against SARS-CoV-2 and Verify Reduced Effect on Animal Skin Cells - LEDinside](https://p.ledinside.com/led/2021-06/1623825783_81376.jpg)
Asahi Kasei and Nara Medical University Confirm 226 nm UVC LED Efficacy Against SARS-CoV-2 and Verify Reduced Effect on Animal Skin Cells - LEDinside
GaN/AlN quantum-disk nanorod 280 nm deep ultraviolet light emitting diodes by molecular beam epitaxy
![Aluminum nitride nanowire light emitting diodes: Breaking the fundamental bottleneck of deep ultraviolet light sources | Scientific Reports Aluminum nitride nanowire light emitting diodes: Breaking the fundamental bottleneck of deep ultraviolet light sources | Scientific Reports](https://media.springernature.com/m685/springer-static/image/art%3A10.1038%2Fsrep08332/MediaObjects/41598_2015_Article_BFsrep08332_Fig1_HTML.jpg)
Aluminum nitride nanowire light emitting diodes: Breaking the fundamental bottleneck of deep ultraviolet light sources | Scientific Reports
![Epileds and HPL Jointly Launched the Bioraytron Brand UVC LED Products — LED professional - LED Lighting Technology, Application Magazine Epileds and HPL Jointly Launched the Bioraytron Brand UVC LED Products — LED professional - LED Lighting Technology, Application Magazine](https://www.led-professional.com/products/uv-ir-components/epileds-and-hpl-jointly-launched-the-bioraytron-brand-uvc-led-products/@@images/a1befa20-bbae-4357-b977-69f02fa21021.jpeg)
Epileds and HPL Jointly Launched the Bioraytron Brand UVC LED Products — LED professional - LED Lighting Technology, Application Magazine
Bright Future of Deep-Ultraviolet Photonics: Emerging UVC Chip-Scale Light-Source Technology Platforms, Benchmarking, Challenges, and Outlook for UV Disinfection | ACS Photonics
![Aluminum nitride nanowire light emitting diodes: Breaking the fundamental bottleneck of deep ultraviolet light sources | Scientific Reports Aluminum nitride nanowire light emitting diodes: Breaking the fundamental bottleneck of deep ultraviolet light sources | Scientific Reports](https://media.springernature.com/lw685/springer-static/image/art%3A10.1038%2Fsrep08332/MediaObjects/41598_2015_Article_BFsrep08332_Fig3_HTML.jpg)
Aluminum nitride nanowire light emitting diodes: Breaking the fundamental bottleneck of deep ultraviolet light sources | Scientific Reports
![Aluminum Nitride Light Emitting Diodes with the Shortest Wavelength|NTT Basic Research Laboratories | NTT R&D Website Aluminum Nitride Light Emitting Diodes with the Shortest Wavelength|NTT Basic Research Laboratories | NTT R&D Website](https://www.rd.ntt/_assets/img/e/brl/latesttopics/2006-5-17/003_01.jpg)
Aluminum Nitride Light Emitting Diodes with the Shortest Wavelength|NTT Basic Research Laboratories | NTT R&D Website
![229 nm UV LEDs on aluminum nitride single crystal substrates using p-type silicon for increased hole injection: Applied Physics Letters: Vol 112, No 8 229 nm UV LEDs on aluminum nitride single crystal substrates using p-type silicon for increased hole injection: Applied Physics Letters: Vol 112, No 8](https://aip.scitation.org/action/showOpenGraphArticleImage?doi=10.1063/1.5011180&id=images/medium/1.5011180.figures.online.highlight_f1.jpg)
229 nm UV LEDs on aluminum nitride single crystal substrates using p-type silicon for increased hole injection: Applied Physics Letters: Vol 112, No 8
![Vertical semiconductor deep ultraviolet light emitting diodes on a nanowire-assisted aluminum nitride buffer layer | Scientific Reports Vertical semiconductor deep ultraviolet light emitting diodes on a nanowire-assisted aluminum nitride buffer layer | Scientific Reports](https://media.springernature.com/full/springer-static/image/art%3A10.1038%2Fs41598-022-11246-0/MediaObjects/41598_2022_11246_Fig1_HTML.png)
Vertical semiconductor deep ultraviolet light emitting diodes on a nanowire-assisted aluminum nitride buffer layer | Scientific Reports
![Improved Emission Efficiency of 210-nm Deep-ultraviolet Aluminum Nitride Light-emitting Diode | NTT Technical Review Improved Emission Efficiency of 210-nm Deep-ultraviolet Aluminum Nitride Light-emitting Diode | NTT Technical Review](https://www.ntt-review.jp/archive_html/201008/images/sf2_fig03.gif)